Magnetic Field Effects in Graphene-Based Spintronic Materials

Abstract

Graphene has emerged as one of the most promising materials for next generation spintronic technologies due to its exceptional electrical conductivity, long spin diffusion length, and weak spin–orbit coupling. These properties enable efficient spin transport and manipulation, which are fundamental for developing spin-based electronic devices. Magnetic fields play a critical role in controlling spin polarization, magnetoresistance, and spin relaxation dynamics in graphene-based materials. This study examines the influence of magnetic fields on spin transport phenomena in graphene and graphene-derived heterostructures. It explores mechanisms such as spin injection, spin diffusion, magnetoresistance effects, and spin orbit coupling modulation under external magnetic fields. Recent experimental and theoretical developments in graphene spintronics are also discussed, highlighting device architectures such as spin valves, magnetic tunnel junctions, and hybrid graphene-ferromagnet systems. The findings demonstrate that magnetic field control can significantly enhance the performance of graphene-based spintronic devices, offering new opportunities for low-power memory systems, quantum information processing, and nanoscale electronics